ELECTRICALLY ACTIVE DEFECTS IN SHALLOW PRE-AMORPHIZED P+N JUNCTIONS IN SILICON

被引：20

作者：

BROTHERTON, SD

AYRES, JR

CLEGG, JB

GOWERS, JP

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 02期

关键词：

D O I：

10.1007/BF02657405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：173 / 184

页数：12

共 17 条

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[2] COMPARISON OF ELECTRICAL DEFECTS IN GE+ AND SI+ PREAMORPHIZED BF2-IMPLANTED SILICON [J].

AYRES, JR ;

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[3]

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[5]

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[9] KINETICS OF THERMAL NITRIDATION PROCESSES IN THE STUDY OF DOPANT DIFFUSION MECHANISMS IN SILICON [J].

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[10] OPTIMIZATION OF THE GERMANIUM PREAMORPHIZATION CONDITIONS FOR SHALLOW-JUNCTION FORMATION [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) :659-668

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