THIN-FILM REACTIONS IN THE SYSTEM TI-SI-O-N

[1] FORMATION OF TISI2 AND TIN DURING NITROGEN ANNEALING OF MAGNETRON SPUTTERED TI FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2264 - 2267

[2] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 61 - 69

[3] THIN-FILM REACTION BETWEEN TI AND SI3N4 [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 953 - 955

[4] THE THIN-FILM REACTION BETWEEN TI AND THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2582 - 2584

[5] TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3558 - 3565

[6] BEYERS R, 1985, MATER RES SOC S P, V47, P143

[7] TITANIUM SILICON AND SILICON DIOXIDE REACTIONS CONTROLLED BY LOW-TEMPERATURE RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 993 - 997

[8] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) : 344 - 351

[9] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6996 - 7002

[10] Hansen M., 1958, CONSTITUTION BINARY, P989

[1] FORMATION OF TISI2 AND TIN DURING NITROGEN ANNEALING OF MAGNETRON SPUTTERED TI FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2264 - 2267

[2] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 61 - 69

[3] THIN-FILM REACTION BETWEEN TI AND SI3N4 [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 953 - 955

[4] THE THIN-FILM REACTION BETWEEN TI AND THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2582 - 2584

[5] TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3558 - 3565

[6] BEYERS R, 1985, MATER RES SOC S P, V47, P143

[7] TITANIUM SILICON AND SILICON DIOXIDE REACTIONS CONTROLLED BY LOW-TEMPERATURE RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 993 - 997

[8] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) : 344 - 351

[9] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6996 - 7002

[10] Hansen M., 1958, CONSTITUTION BINARY, P989