OVER-PASSIVATION OF SULFUR TREATED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：10

作者：

SHIKATA, S

OKADA, H

HAYASHI, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 05期

关键词：

D O I：

10.1116/1.585722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The over-passivations of sulfur treated GaAs were investigated by the photoluminescence measurement and device characteristics of AlGaAs/GaAs heterojunction bipolar transistors. The two chemical vapor deposition systems of the conventional plasma enhanced process and electron cyclotron resonance process were employed. The surface recombination current density calculated from the current gain and the base current noise was reduced to 25% by sulfur treatment and over-passivation process using the electron cyclotron resonance deposition system, whereas over-passivation by the plasma enhanced deposition system gave some damage to the sulfur treated surface.

引用

页码：2479 / 2482

页数：4

共 29 条

[11] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

NAKAJIMA, O ;

NAGATA, K ;

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L596-L598

[12] SUPPRESSION OF EMITTER SIZE EFFECT ON CURRENT GAIN IN ALGAAS/GAAS HBTS [J].

NAKAJIMA, O ;

NAGATA, K ;

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (10) :1368-1369

[13]

NANNICHI Y, 1989, OYOBUTSURI, V58, P1340

[14]

NUBLING RB, 1990, IEEE GAAS IC S, V53

[15] STUDIES ON AN (NH4)2SX-TREATED GAAS SURFACE USING AES, LEELS AND RHEED [J].

OIGAWA, H ;

FAN, JF ;

NANNICHI, Y ;

ANDO, K ;

SAIKI, K ;

KOMA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (03) :L340-L342

[16] ELECTRICAL CHARACTERISTICS AND RELIABILITY OF PT/TI/PT/AU OHMIC CONTACTS TO P-TYPE GAAS [J].

OKADA, H ;

SHIKATA, S ;

HAYASHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A) :L558-L560

[17] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[18] ELECTRONIC PASSIVATION OF GAAS-SURFACES THROUGH THE FORMATION OF ARSENIC SULFUR BONDS [J].

SANDROFF, CJ ;

HEGDE, MS ;

FARROW, LA ;

CHANG, CC ;

HARBISON, JP .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :362-364

[19] ENHANCED ELECTRONIC-PROPERTIES OF GAAS-SURFACES CHEMICALLY PASSIVATED BY SELENIUM REACTIONS [J].

SANDROFF, CJ ;

HEGDE, MS ;

FARROW, LA ;

BHAT, R ;

HARBISON, JP ;

CHANG, CC .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :586-588

[20] STRUCTURE AND STABILITY OF PASSIVATING ARSENIC SULFIDE PHASES ON GAAS-SURFACES [J].

SANDROFF, CJ ;

HEGDE, MS ;

CHANG, CC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :841-844

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