HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY AS A PROBE OF SURFACE-MORPHOLOGY AND ELECTRONIC STATES AT METAL-SEMICONDUCTOR INTERFACES

被引：8

作者：

CHAMBERS, SA ^{[1
]}

DELGIUDICE, M ^{[1
]}

RUCKMAN, MW ^{[1
]}

ANDERSON, SB ^{[1
]}

WEAVER, JH ^{[1
]}

LAPEYRE, GJ ^{[1
]}

机构：

[1] MONTANA STATE UNIV,DEPT PHYS,BOZEMAN,MT 59717

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573514

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1595 / 1598

页数：4

共 20 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
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[2] DETERMINATION OF EPITAXIAL OVERLAYER STRUCTURES FROM HIGH-ENERGY ELECTRON-SCATTERING AND DIFFRACTION
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[3] STRUCTURAL CHARACTERIZATION OF METAL-METAL INTERFACES BY INTERMEDIATE-ENERGY AUGER-ELECTRON DIFFRACTION
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[5] ATOMIC-STRUCTURE OF THE CU/SI(111) INTERFACE BY HIGH-ENERGY CORE-LEVEL AUGER-ELECTRON DIFFRACTION
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[6] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION
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[7] CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE
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[J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5149 - 5155
[8] X-RAY PHOTOELECTRON AND AUGER-ELECTRON FORWARD SCATTERING - A NEW TOOL FOR STUDYING EPITAXIAL-GROWTH AND CORE-LEVEL BINDING-ENERGY SHIFTS
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[J]. PHYSICAL REVIEW B, 1984, 30 (02): : 1052 - 1055
[9] CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111)
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[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (24) : 2331 - 2334
[10] LOW TEMPERATURE REACTIONS AT SI/METAL INTERFACES; WHAT IS GOING ON AT THE INTERFACES?
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[J]. SURFACE SCIENCE REPORTS, 1983, 3 (07) : 357 - 412

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