CHARACTERIZATION OF ETCH RATE AND ANISOTROPY IN THE TEMPERATURE-CONTROLLED CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS

被引：20

作者：

GRANDE, WJ

JOHNSON, JE

TANG, CL

机构：

[1] IIT,RES INST,CHICAGO,IL 60616

[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 05期

关键词：

D O I：

10.1116/1.584919

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1075 / 1079

页数：5

共 25 条

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