A CRITICAL DISCUSSION OF EMISSION MECHANISMS AND REACTION-RATES FOR THE ION-ASSISTED ETCHING OF GAAS(100)

被引：32

作者：

OBRIEN, WL ^{[1
]}

PAULSENBOAZ, CM ^{[1
]}

RHODIN, TN ^{[1
]}

RATHBUN, LC ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6523 / 6529

页数：7

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