ION-INDUCED CHLORINATION OF TITANIUM LEADING TO ENHANCED ETCHING

被引：9

作者：

OBRIEN, WL ^{[1
]}

RHODIN, TN ^{[1
]}

RATHBUN, LC ^{[1
]}

机构：

[1] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853

来源：

JOURNAL OF CHEMICAL PHYSICS | 1988年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.455617

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：5264 / 5272

页数：9

共 27 条

[1]

AGAFONOV IL, 1970, ZH NEORG KHIM+, V15, P574

[2]

BARBER M, 1961, J CHEM SOC, V3, P3323

[3]

BRICE DK, 1975, ION IMPLANTATION RAN, V2

[4] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[5] STUDIES ON THE MECHANISM OF CHEMICAL SPUTTERING OF SILICON BY SIMULTANEOUS EXPOSURE TO CL-2 AND LOW-ENERGY AR+ IONS [J].

DIELEMAN, J ;

SANDERS, FHM ;

KOLFSCHOTEN, AW ;

ZALM, PC ;

DEVRIES, AE ;

HARING, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1384-1392

[6] ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM [J].

GERLACHMEYER, U .

SURFACE SCIENCE, 1981, 103 (2-3) :524-534

[7] CHEMICAL SPUTTERING BY KEV IONS [J].

HARING, RA ;

KOLFSCHOTEN, AW ;

DEVRIES, AE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) :544-549

[8] THE MECHANISMS OF SPUTTERING .1. PROMPT AND SLOW COLLISIONAL SPUTTERING [J].

KELLY, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1984, 80 (3-4) :273-317

[9] ENERGY-DISTRIBUTION OF SPUTTERED CLUSTERS [J].

KONNEN, GP ;

TIP, A ;

VRIES, AED .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (1-2) :23-29

[10] INVESTIGATION OF THE KINETIC MECHANISM FOR THE ION-ASSISTED ETCHING OF GAAS IN CL-2 USING A MODULATED ION-BEAM [J].

MCNEVIN, SC ;

BECKER, GE .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4670-4678

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