CALCULATED ELECTRON AND HOLE SPATIAL IONIZATION PROFILES IN BULK GAAS AND SUPERLATTICE AVALANCHE PHOTODIODES

被引：12

作者：

BRENNAN, K ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 10期

关键词：

Manuscript received January 20. 1988; revised May 2; 1988. This work was supported in part by the Polaroid Corporation under Contract B-10- 635. The author IS with the School of Electrical Engineering and Microelectronics Research Center; Georgia Institute of Technology. Atlanta; GA 30332. IEEE Log Number 8822670;

D O I：

10.1109/3.8535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2001 / 2006

页数：6

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