DEVICE APPLICATIONS OF VANADIUM-DOPED SILICON-DIOXIDE

被引：1

作者：

DELIMA, JJ ^{[1
]}

SNELL, AJ ^{[1
]}

KRISHNA, KV ^{[1
]}

OWEN, AE ^{[1
]}

HAWRYLIW, A ^{[1
]}

THOMPSON, R ^{[1
]}

机构：

[1] HUGHES MICROELECTR LTD,GLENROTHES,SCOTLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4082 / 4084

页数：3

共 10 条

[1]

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[8]

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[9] THEORY OF METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS [J].

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[10] THEORY OF SWITCHING PHENOMENA IN METAL-SEMI-INSULATOR-N-P+ SILICON DEVICES [J].

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