UNIFIED MODEL FOR FORMATION KINETICS OF OXYGEN THERMAL DONORS IN SILICON

被引：41

作者：

WADA, K

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.30.5884

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5884 / 5895

页数：12

共 37 条

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