ROOM-TEMPERATURE 632-BULLET-7 NM CW OPERATION OF ALGALNP STRAINED MULTIQUANTUM WELL LASERS GROWN ON (100) GAAS

被引：9

作者：

YOSHIDA, I

KATSUYAMA, T

HASHIMOTO, J

TANIGUCHI, Y

HAYASHI, H

机构：

[1] Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd., Yokohama 244, Taya-cho 1, Sakae-ku

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 07期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature (25-degrees-C) 632.7 nm continuous wave operation of AlGaInP strained multiquantum well lasers has been achieved on (100) just oriented GaAs substrate for the first time. The device operated in CW mode up to 38-degrees-C.

引用

页码：628 / 629

页数：2

共 11 条

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