EPITAXIAL-GROWTH OF GAINP ON (111)A AND (111)B SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

The structure and the mechanism of the roughening of lattice-matched GaInP crystals grown on an exactly oriented (111)A and B and a misoriented (111)B GaAs substrate by MOCVD were studied. The overlayer on the (111)A surface was a mosaic crystal. The overlayer on the exactly oriented (111)B surface contained primary twins with a twin plane parallel to the substrate surface. The twin was identified as a "rotation twin" by high-resolution transmission electron microscopy. A multiple twin structure was revealed to form at the periphery of the primary twin, which was found to result in the rough surface of the exactly oriented (111)B GaInP. The suppression of a roughening by growth on an intentionally misorientated substrate surface would be responsible for the suppression of the primary rotation twinning and further multiple twinning by the preferential growth at steps, which follow the stacking sequence. © 1990.