PHOTOLUMINESCENCE STUDIES OF HETEROEPITAXIAL GAAS ON SI

[1] BLYSMA RB, UNPUB

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 500 - 502

[4] PHOTOLUMINESCENCE AND X-RAY-PROPERTIES OF HETEROEPITAXIAL GALLIUM-ARSENIDE ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2161 - 2164

[5] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77

[6] AN INTEGRATED LABORATORY-REACTOR MOCVD SAFETY SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) : 421 - 428

[7] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311

[8] BAND-GAP ENERGY AND STRESS OF GAAS GROWN ON SI BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (11): : 1680 - 1683

[9] GAAS E/D MESFET 1-KBIT STATIC RAM FABRICATED ON SILICON SUBSTRATE [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 121 - 123

[10] TURNER GW, 1986, MATER RES SOC S P, V67, P181

[1] BLYSMA RB, UNPUB

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 500 - 502

[4] PHOTOLUMINESCENCE AND X-RAY-PROPERTIES OF HETEROEPITAXIAL GALLIUM-ARSENIDE ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2161 - 2164

[5] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77

[6] AN INTEGRATED LABORATORY-REACTOR MOCVD SAFETY SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) : 421 - 428

[7] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311

[8] BAND-GAP ENERGY AND STRESS OF GAAS GROWN ON SI BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (11): : 1680 - 1683

[9] GAAS E/D MESFET 1-KBIT STATIC RAM FABRICATED ON SILICON SUBSTRATE [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 121 - 123

[10] TURNER GW, 1986, MATER RES SOC S P, V67, P181