SILICIDE-SILICON INTERFACE DEGRADATION DURING TITANIUM SILICIDE POLYSILICON OXIDATION

被引：9

作者：

TANIELIAN, M ^{[1
]}

LAJOS, R ^{[1
]}

BLACKSTONE, S ^{[1
]}

PRAMANIK, D ^{[1
]}

机构：

[1] GOULD AMER MICROSYST INC, SANTA CLARA, CA 95051 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 06期

关键词：

D O I：

10.1149/1.2114143

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SILICON AND ALLOYS

引用

页码：1456 / 1460

页数：5

共 11 条

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