HIGH-SELECTIVITY PLASMA-ETCHING OF SILICON DIOXIDE ON SINGLE-WAFER ETCHERS

被引：16

作者：

YIN, GZ

BENDOR, M

CHANG, MS

YEP, TO

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575867

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：691 / 695

页数：5

共 14 条

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