TUNGSTEN PATTERNING AS A TECHNIQUE FOR SELECTIVE AREA III-V MBE GROWTH

被引：5

作者：

HARBISON, JP

DERKITS, GE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：743 / 745

页数：3

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