CONDITIONS FOR THERMAL NITRIDATION OF SI IN N2-O2 MIXTURES

被引：20

作者：

GIRIDHAR, RV ^{[1
]}

ROSE, K ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 11期

关键词：

D O I：

10.1149/1.2095436

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2803 / 2807

页数：5

共 23 条

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[8] SF6 ENHANCED NITRIDATION OF SILICON IN ACTIVE NITROGEN [J].

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[9] ACTIVE OXIDATION OF SI AND SIC IN VISCOUS GAS-FLOW REGIME [J].

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[10]

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