SURFACE SEGREGATION AT BORON PLANAR DOPING IN SILICON MOLECULAR-BEAM EPITAXY

被引：13

作者：

TATSUMI, T ^{[1
]}

HIRAYAMA, H ^{[1
]}

AIZAKI, N ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.L954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L954 / L956

页数：3

共 12 条

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