STRUCTURAL AND ELECTRICAL-PROPERTIES OF ZRSI2 AND ZR2CUSI4 FORMED BY RAPID THERMAL-PROCESSING

被引：19

作者：

SETTON, M ^{[1
]}

VANDERSPIEGEL, J ^{[1
]}

机构：

[1] UNIV PENN,RES STRUCT MAT LAB,PHILADELPHIA,PA 19104

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 01期

关键词：

D O I：

10.1063/1.350307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of ZrSi2 and Zr2CuSi4 has been achieved by rapid thermal processing in vacuum. Fast heating rates and temperatures of at least 950-degrees-C are required to form smooth Zr disilicide with a room-temperature resistivity of 34-mu-OMEGA cm. In agreement with the bulk phase diagram, the ternary compound can be prepared by reacting Cu with the disilicide. This phase is formed through the diffusion and the insertion of Cu atoms into the twin faults of the pseudolamellar C 49 Zr silicide structure; it belongs to the same Cmcm space group. Electrical measurements indicate that ZrSi2 is an electron conductor whereas a mixed conduction mechanism is found for the ternary samples.

引用

页码：193 / 197

页数：5

共 16 条

[1] POLYTYPE FORMATION IN ZIRCONIUM-SILICON THIN-FILMS [J].