STRAINED P-CHANNEL INGASB/ALGASB MODULATION-DOPED FIELD-EFFECT TRANSISTORS

Strained In0.25Ga0.75Sb p-channeL modulation-doped field-effect transistors with AL0.75GA0.25Sb Be-doped barrier layers are demonstrated. The extrinsic normalised transconductances for 1.2-mu-m gate length devices range from 33 to 51 mS/mm at 300 K and from 132 to 161 mS/mm at 77 K. At 300 K, the devices operated in depletion mode with a threshold voltage of approximately 0.3 V, a normalised output conductance of less than 3 mS/mm, and maximum drain current densities of approximately 20 mA/mm. The devices show promise for complementary heterojunction field-effect transistor logic applications.