PARA-CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS BASED ON ALSB0.9AS0.1/GASB

被引：22

作者：

LUO, LF

LONGENBACH, KF

WANG, WI

机构：

[1] Department of Electrical Engineering, Columbia University, New York

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 12期

关键词：

D O I：

10.1109/55.63042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the successful operation of the first AlSbAs/ GaSb p-channel modulation-doped field-effect transistor. Devices with 1-μm gate length exhibit transconductances of 30 and 110 mS/mm at room temperature and 80 K, with respective maximum drain current densities of 25 and 80 mA/mm. The low field Hall mobility and sheet carrier density of this modulation doped structure are 260 cm2/V. s and 1.8 x 1012 cm-2 at room temperature and 1700 cm2/V. s and 1.4 x 1012 cm-2 at 77 K. Calculations based on these results indicate that room-temperature transconductances of 200 mS/mm or greater could be achieved. This device can be integrated with an InAs n-channel HFET for complementary circuit applications. © 1990 IEEE

引用

页码：567 / 569

页数：3

共 12 条

[1] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].