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AN APPROACH TO DETERMINE THE SMALL-SIGNAL EQUIVALENT-CIRCUIT OF SUB-MU-M GAAS-MESFETS INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS

被引：2
作者：
FENG, YK
机构：
[1] NAMO HiTek GmbH, W-2100 Hamburg 90
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 03期
关键词：
D O I：
10.1016/0038-1101(93)90100-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An approach including the effects of nonstationary electron dynamics is used to derive a small-signal equivalent circuit model useful for the evaluation of GaAs device structures. The calculated results show that (1) the nonstationary electron transport decreases not only the active channel resistance but also both the feedback resistance and the output impedance, so that instability effects are enhanced and the maximum stable gain is decreased; and that (2) the high field domain plays a major role for small-signal properties of sub-mum GaAs MESFETs
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收藏
页码：443 / 453
页数：11
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