INTRINSIC GAAS-MESFET EQUIVALENT-CIRCUIT MODELS GENERATED FROM TWO-DIMENSIONAL SIMULATIONS

被引：10

作者：

CURTICE, WR ^{[1
]}

机构：

[1] MICROWAVE SEMICOND CORP,SOMERSET,NJ 08873

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1989年 / 8卷 / 04期

关键词：

Electric Networks--Equivalent Circuits - Integrated Circuits; Digital--Computer Aided Design - Integrated Circuits; Monolithic--Microwaves - Mathematical Transformations--Fourier Transforms - Semiconductor Devices--Transients;

D O I：

10.1109/43.29593

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An accurate, physically based two-dimensional GaAs MESFET model is used to generate small-signal and large-signal equivalent circuit models useful for the evaluation of GaAs device structures and GaAs integrated circuits. The models and the simulation techniques described provide a useful means of evaluating RF performance on the basis of the physical properties of the FET. As an example, the small- and large-signal device characteristics are evaluated as a function of drain-source bias voltage and lattice temperature for a 0.8-μm gate length FET. The small-signal results show severe degradation of frequency response with increase of drain-source bias voltage because of a high electric field in the conduction channel. The large-signal results show that the decrease in RF power capability with temperature increase is primarily due to declining current capability with temperature.

引用

页码：395 / 402

页数：8

共 14 条

[1] SATURATION MECHANISM IN 1-MUM GATE GAAS-FET WITH CHANNEL-SUBSTRATE INTERFACIAL BARRIER [J].