THE EFFECT OF DRAIN BIAS UPON FREQUENCY-RESPONSE IN GAAS-MESFETS

被引：2

作者：

CURTICE, WR

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

D O I：

10.1109/16.2565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1386 / 1389

页数：4

共 11 条

[1] A NONLINEAR GAAS-FET MODEL FOR USE IN THE DESIGN OF OUTPUT CIRCUITS FOR POWER-AMPLIFIERS [J].

CURTICE, WR ;

ETTENBERG, M .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) :1383-1394

[2] A TEMPERATURE MODEL FOR THE GAAS-MESFET [J].

CURTICE, WR ;

YUN, YH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :954-962

[3] DIRECT COMPARISON OF THE ELECTRON-TEMPERATURE MODEL WITH THE PARTICLE-MESH (MONTE-CARLO) MODEL FOR THE GAAS-MESFET [J].

CURTICE, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1942-1943

[4] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J].

ENGELMANN, RWH ;

LIECHTI, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1288-1296

[5]

LEE SH, 1984, IEEE T ELECTRON DEV, V31, P1068

[6] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

[7]

SMITH PM, 1980, APPL PHYS LETT, V3, P797

[8] CONTROL OF GATE-DRAIN AVALANCHE IN GAAS-MESFETS [J].

WEMPLE, SH ;

NIEHAUS, WC ;

COX, HM ;

DILORENZO, JV ;

SCHLOSSER, WO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1013-1018

[9] TECHNIQUE FOR PREDICTING LARGE-SIGNAL PERFORMANCE OF A GAAS MESFET [J].

WILLING, HA ;

RAUSCHER, C ;

DESANTIS, P .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (12) :1017-1023

[10]

1987, GAAS MMIC DESIGN MAN, pCH6

← 1 2 →