A 500 KEV ION-BEAM ACCELERATOR FOR MICROBEAM FORMATION

被引:12
作者
AGAWA, Y
UCHIYAMA, T
HOSHINO, A
TSUBOI, H
FUKUI, R
TAKAGI, K
YAMAKAWA, H
MATSUO, T
TAKAI, M
NAMBA, S
机构
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
[2] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
关键词
D O I
10.1016/0168-583X(90)90895-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A 500 keV ion accelerator with a Disktron high-voltage generator has been developed for RBS analysis with microbeam and ion beam modification. An accelerating voltage stability of better than 4.5 × 10-4, with a long-term (∼1 h) current stability of better than 3%, was obtained for both proton and helium ions at 400 keV. The short-term (∼ ms) current stability, which is very important for RBS mapping measurements, was found to be better than 2 × 10-3. The X-ray dose rate around the accelerator was less than 0.03 mR/h at maximum with an acceleration of helium ions of 40 μA at an energy of 500 keV. © 1990.
引用
收藏
页码:540 / 542
页数:3
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