LOCALIZED EPITAXIAL-GROWTH OF MNSI1.7 ON SILICON

被引：64

作者：

LIAN, YC

CHEN, LJ

机构：

[1] Natl Tsing Hua Univ, Hsinchu, Taiwan, Natl Tsing Hua Univ, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.96551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

21

引用

收藏

页码：359 / 361

页数：3

相关论文

共 21 条

[1] BOREN A, 1965, BORIDES SILICIDES PH
[2] EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON
CHEN, LJ
CHANG, TT
[J]. THIN SOLID FILMS, 1983, 104 (1-2) : 183 - 189
[3] INTERFACIAL REACTIONS OF IRON THIN-FILMS ON SILICON
CHENG, HC
YEW, TR
CHEN, LJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5246 - 5250
[4] EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME
CHENG, HC
CHEN, LJ
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 562 - 564
[5] EPITAXIAL-GROWTH OF VSI2 ON (111)SI
CHIEN, CJ
CHENG, HC
NIEH, CW
CHEN, LJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1887 - 1889
[6] CHU JP, UNPUB
[7] FORMATION AND SCHOTTKY BEHAVIOR OF MANGANESE SILICIDES ON NORMAL-TYPE SILICON
EIZENBERG, M
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6885 - 6890
[8] LOCALIZED EPITAXIAL-GROWTH OF C54 AND C49 TISI2 ON (111)SI
FUNG, MS
CHENG, HC
CHEN, LJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1312 - 1314
[9] KARPINSKII OG, 1969, IZVESTIYA AKAD NAUK, V0005
[10] CRYSTAL-GROWTH OF MANGANESE SILICIDE, MNSI APPROXIMATELY 1.73 AND SEMICONDUCTING PROPERTIES OF MN15SI26
KAWASUMI, I
SAKATA, M
NISHIDA, I
MASUMOTO, K
[J]. JOURNAL OF MATERIALS SCIENCE, 1981, 16 (02) : 355 - 366