SOME RECENT STUDIES OF VERY THIN SIO2-FILMS

被引:8
作者
VANDERMEULEN, YJ [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 06期
关键词
D O I
10.1116/1.1318717
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:985 / 989
页数:5
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共 26 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]  
BASHARA NM, 1969, SURF SCI, V16, P137
[3]   STUDIES OF SOLID SURFACES WITH 100 KEV 4HE+ AND H+ ION-BEAMS [J].
BUCK, TM ;
WHEATLEY, GH .
SURFACE SCIENCE, 1972, 33 (01) :35-&
[4]   PHOSPHORUS CONCENTRATION PROFILES IN P-DOPED SILICON DIOXIDE MEASURED USING AUGER-SPECTROSCOPY [J].
CHANG, CC ;
ADAMS, AC ;
QUINTANA, G ;
SHENG, TT .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :252-256
[5]   AUGER AND ELLIPSOMETRIC STUDY OF PHOSPHORUS SEGREGATION IN OXIDIZED DEGENERATE SILICON [J].
CHOU, NJ ;
VANDERME.YJ ;
HAMMER, R ;
CAHILL, J .
APPLIED PHYSICS LETTERS, 1974, 24 (04) :200-202
[6]   AUGER ANALYSIS OF CHLORINE IN HCL-GROWN, OR CL2-GROWN SIO2 FILMS [J].
CHOU, NJ ;
OSBURN, CM ;
VANDERME.YJ ;
HAMMER, R .
APPLIED PHYSICS LETTERS, 1973, 22 (08) :380-381
[7]   LINE-SHAPE EXTRACTION ANALYSIS OF SILICON-OXIDE LAYERS ON SILICON BY CHANNELING EFFECT MEASUREMENTS [J].
CHU, WK ;
LUGUJJO, E ;
MAYER, JW ;
SIGMON, TW .
THIN SOLID FILMS, 1973, 19 (02) :329-337
[8]   PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].
CHU, WK ;
MAYER, JW ;
NICOLET, MA ;
BUCK, TM ;
AMSEL, G ;
EISEN, F .
THIN SOLID FILMS, 1973, 17 (01) :1-41
[9]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[10]   BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J].
DISTEFAN.TH .
APPLIED PHYSICS LETTERS, 1971, 19 (08) :280-&