SUPERCELL CALCULATION ON THE IDEAL SILICON SINGLE VACANCY

被引：5

作者：

CHING, WY

HUANG, MZ

机构：

[1] Univ of Missouri-Kansas City, Dep of, Physics, Kansas City, MO, USA, Univ of Missouri-Kansas City, Dep of Physics, Kansas City, MO, USA

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 57卷 / 05期

关键词：

DEFECT INTERACTION - DIAMOND LATTICE - IDEAL VACANCY - SINGLE VACANCY - SUPERCELL CALCULATION;

D O I：

10.1016/0038-1098(86)90096-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：305 / 307

页数：3

共 23 条

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