STRUCTURAL AND ELECTRONIC-PROPERTIES OF BI/GAAS(110)

被引：59

作者：

LUDEKE, R

TALEBIBRAHIMI, A

FEENSTRA, RM

MCLEAN, AB

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：936 / 944

页数：9

共 48 条

[31] ELECTRONIC AND STRUCTURAL-PROPERTIES OF A DISCOMMENSURATE MONOLAYER SYSTEM - GAAS(110)-(1X1)BI [J].

MCLEAN, AB ;

FEENSTRA, RM ;

TALEBIBRAHIMI, A ;

LUDEKE, R .

PHYSICAL REVIEW B, 1989, 39 (17) :12925-12928

[32]

MYRON JR, 1985, 17TH P INT C PHYS SE, P133

[33] PHOTOEMISSION-STUDY OF BONDING AT THE CAF2-ON-SI(111) INTERFACE [J].

OLMSTEAD, MA ;

UHRBERG, RIG ;

BRINGANS, RD ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1987, 35 (14) :7526-7532

[34] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE [J].

RIEGER, D ;

HIMPSEL, FJ ;

KARLSSON, UO ;

MCFEELY, FR ;

MORAR, JF ;

YARMOFF, JA .

PHYSICAL REVIEW B, 1986, 34 (10) :7295-7306

[35] SB/GAAS(110) INTERFACE - A REEVALUATION [J].

SCHAFFLER, F ;

LUDEKE, R ;

TALEBIBRAHIMI, A ;

HUGHES, G ;

RIEGER, D .

PHYSICAL REVIEW B, 1987, 36 (02) :1328-1331

[36] THE ROLE OF ORDER ON THE INTERFACE PROPERTIES OF SB/GAAS(110) [J].

SCHAFFLER, F ;

LUDEKE, R ;

TALEBIBRAHIMI, A ;

HUGHES, G ;

RIEGER, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1048-1053

[37]

SEBENNE CA, 1985, 17TH P INT C PHYS SE, P143

[38] BONDING OF ANTIMONY ON GAAS(110) - A PROTOTYPICAL SYSTEM FOR ADSORPTION OF COLUMN-V ELEMENTS ON III-V COMPOUNDS [J].

SKEATH, P ;

SU, CY ;

HARRISON, WA ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1983, 27 (10) :6246-6262

[39] INVESTIGATION OF THE MECHANISM FOR SCHOTTKY-BARRIER FORMATION BY GROUP-III METALS ON GAAS(110) [J].

SKEATH, P ;

LINDAU, I ;

CHYE, PW ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1143-1148

[40] THE ADSORPTION OF GA AND SB ON CLEAVED INP SURFACES [J].

STRINGER, C ;

MCKINLEY, A ;

HUGHES, G ;

WILLIAMS, RH .

VACUUM, 1983, 33 (10-1) :597-600

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