REVERSE DOPANT REDISTRIBUTION DURING THE INITIAL-STAGES OF THE OXIDATION OF HEAVILY DOPED SILICON IN DRY OXYGEN

被引：7

作者：

MASSOUD, HZ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 06期

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D O I：

10.1063/1.100618

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：497 / 499

页数：3

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