ANOMALOUS OXIDATION RATE OF SILICON IMPLANTED WITH VERY HIGH-DOSES OF ARSENIC

被引：11

作者：

CHOI, SS ^{[1
]}

NUMAN, MZ ^{[1
]}

CHU, WK ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27514

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1001 / 1003

页数：3

共 13 条

[1] REDISTRIBUTION OF ARSENIC IN SILICON DURING HIGH-PRESSURE THERMAL-OXIDATION
CHOI, SS
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IRENE, EA
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 688 - 690
[2] FROMHOLD AT, 1976, THEORY METAL OXIDATI, P230
[3] DOPANT DEPENDENCE OF THE OXIDATION RATE OF ION-IMPLANTED SILICON
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TRAUMULLER, E
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 203 - 209
[4] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[5] INVESTIGATION OF SILICON ETCHING AND SILICON DIOXIDE BUBBLE FORMATION DURING SILICON OXIDATION IN HC1-OXYGEN ATMOSPHERES
HESS, DW
MCDONALD, RC
[J]. THIN SOLID FILMS, 1977, 42 (01) : 127 - 131
[6] KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON
HIRABAYA.K
IWAMURA, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1595 - 1601
[7] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON
HO, CP
PLUMMER, JD
MEINDL, JD
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 665 - 671
[8] SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY
HO, CP
PLUMMER, JD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1516 - 1522
[9] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON
IRENE, EA
DONG, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1146 - 1151
[10] KATZ LE, 1983, VLSI TECHNOLOGY, P147

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