DIFFRACTION EFFECTS IN X-RAY PROXIMITY PRINTING

被引:5
作者
DUBNER, AD [1 ]
WAGNER, A [1 ]
LEVIN, JP [1 ]
MAUER, J [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,ESSEX JCT,VT 05452
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 05期
关键词
D O I
10.1116/1.586195
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of diffraction on the shape and size of features printed using x-ray proximity printing with a collimated x-ray source (measured beam divergence of approximately 0.2 mrad full width at half-maximum) at mask to wafer gaps of 25 mum and above is described. Three major conclusions can be drawn from the results: (1) Diffraction can distort the shape of a printed feature, and the systematic shape changes observed in resist images can be explained using simple scaling based on Fresnel diffraction; (2) The linewidth change with exposure dose is independent of feature type and size, and depends only on the square root of the mask to wafer gap; and (3) The bias of each printed feature varies when all of the feature types and sizes are printed at the same dose. Resist images of 2.0-0.25 mum contact holes printed at mask to wafer gaps ranging from 25 to 515 mum are presented. The square contact holes on the mask print diamond shaped at a Fresnel number of 2.5. Isolated lines, spaces, and line-space arrays ranging from 1.0 to 0.25 mum were printed in thin PMMA (0. 1 mum thick) resist at gaps ranging from 25 to 80 mum over a series of exposure doses. A 10% increase in exposure dose results in a 16, 20, and 30 nm change in linewidth at gaps of 25, 40, 80 mum, respectively. When the 1.0-0.25 mum lines, spaces, and line-space arrays are printed with a single dose at a 40 mum gap, the bias variation among the features appears to be approximately +/- 20 nm. However, this bias measurement is very sensitive to the metrology technique used, and systematic errors in these absolute measurements may be a significant contributor to the observed bias variation. All the experimental results are compared to calculated aerial images. Exposures in thick PMMA (0.5 mum) show trends similar to those observed in thin resist. However, as the thickness of the resist increases, the dose at which the printed linewidth has zero bias decreases, and approaches the dose required to clear a large open area.
引用
收藏
页码:2234 / 2242
页数:9
相关论文
共 28 条
  • [1] ACOSTA RE, 1984, P SOC PHOTO-OPT INST, V448, P114, DOI 10.1117/12.939214
  • [2] 3-DIMENSIONAL SIMULATION OF PROXIMITY PRINTING
    ARSHAK, A
    KUNDU, NN
    ARSHAK, K
    GUPTA, SN
    [J]. MICROELECTRONIC ENGINEERING, 1991, 14 (01) : 41 - 58
  • [3] DIFFRACTION EFFECTS ON PATTERN REPLICATION WITH SYNCHROTRON RADIATION
    ATODA, N
    KAWAKATSU, H
    TANINO, H
    ICHIMURA, S
    HIRATA, M
    HOH, K
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1267 - 1270
  • [4] BORN M, 1980, PRINCIPLES OPTICS, P433
  • [5] Born M., 1980, PRINCIPLES OPTICS
  • [6] REPLICATION OF 50-NM-LINEWIDTH DEVICE PATTERNS USING PROXIMITY X-RAY-LITHOGRAPHY AT LARGE GAPS
    CHU, W
    SMITH, HI
    SCHATTENBURG, ML
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (13) : 1641 - 1643
  • [7] AERIAL IMAGE-FORMATION IN SYNCHROTRON-RADIATION-BASED X-RAY-LITHOGRAPHY - THE WHOLE PICTURE
    GUO, JZY
    CHEN, G
    WHITE, V
    ANDERSON, P
    CERRINA, F
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1551 - 1556
  • [8] VERIFICATION OF PARTIALLY COHERENT-LIGHT DIFFRACTION MODELS IN X-RAY-LITHOGRAPHY
    GUO, JZY
    CERRINA, F
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3207 - 3213
  • [9] SYNCHROTRON RADIATION X-RAY-LITHOGRAPHY
    HAELBICH, RP
    SILVERMAN, JP
    WARLAUMONT, JM
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 222 (1-2) : 291 - 301
  • [10] COMPUTER-SIMULATIONS OF RESIST PROFILES IN X-RAY-LITHOGRAPHY
    HEINRICH, K
    BETZ, H
    HEUBERGER, A
    PONGRATZ, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1254 - 1258