INCORPORATION OF CARBON-DIOXIDE LASER-GROWN OXIDE LAYERS INTO CONVENTIONAL METAL-OXIDE-SILICON DEVICES

被引：5

作者：

BOYD, IW ^{[1
]}

机构：

[1] HERIOT WATT UNIV, DEPT PHYS, EDINBURGH EH14 4AS, MIDLOTHIAN, SCOTLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3561 / 3565

页数：5

共 15 条

[1]

APPLETON BR, 1982, LASER ELECTRON BEAM

[2] OXIDATION OF SILICON SURFACES BY CO2-LASERS [J].

BOYD, IW ;

WILSON, JIB .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :162-164

[3] LASER-INDUCED OXIDATION OF SILICON [J].

BOYD, IW ;

WILSON, JIB ;

WEST, JL .

THIN SOLID FILMS, 1981, 83 (04) :L173-L176

[4]

BOYD IW, 1982, THESIS HERIOT WATT U

[5]

BOYD IW, 1981, J PHYS E, V15, P421

[6]

BOYD IW, 1982, UNPUB 16TH INT C PHY

[7] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 [J].

BOYER, PK ;

ROCHE, GA ;

RITCHIE, WH ;

COLLINS, GJ .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :716-719

[8] LASER MICROPHOTOCHEMISTRY FOR USE IN SOLID-STATE ELECTRONICS [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (11) :1233-1243

[9] APPLICATIONS OF SCANNING CW LASERS AND ELECTRON-BEAMS IN SILICON TECHNOLOGY [J].

GIBBONS, JF .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :121-128

[10] CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2 [J].

HARARI, E .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :601-603

← 1 2 →