OXIDATION OF SILICON SURFACES BY CO2-LASERS

被引：24

作者：

BOYD, IW

WILSON, JIB

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.93439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：162 / 164

页数：3

共 26 条

[1] DYNAMICS OF LASER-INDUCED FORMATION OF PALLADIUM SILICIDE [J].

ALLMEN, MV ;

WITTMER, M .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :68-70

[2] A STUDY OF THIN SILICON DIOXIDE FILMS USING INFRARED-ABSORPTION TECHNIQUES [J].

BOYD, IW ;

WILSON, JIB .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4166-4172

[3] LASER-INDUCED OXIDATION OF SILICON [J].

BOYD, IW ;

WILSON, JIB ;

WEST, JL .

THIN SOLID FILMS, 1981, 83 (04) :L173-L176

[4] A REAL-TIME VISUAL-DISPLAY OF A HIGH-POWER LASER-BEAM [J].

BOYD, IW ;

CROWDER, JG .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (04) :421-422

[5] OXIDATION OF SILICON BY ION-IMPLANTATION AND LASER IRRADIATION [J].

CHIANG, SW ;

LIU, YS ;

REIHL, RF .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :752-754

[6] CHEMICAL VAPOR-DEPOSITION OF SILICON USING A CO2-LASER [J].

CHRISTENSEN, CP ;

LAKIN, KM .

APPLIED PHYSICS LETTERS, 1978, 32 (04) :254-256

[7] LASER PHOTODEPOSITION OF METAL-FILMS WITH MICROSCOPIC FEATURES [J].

DEUTSCH, TF ;

EHRLICH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :175-177

[8] CHARACTERISTICS OF A PROPAGATING GAUSSIAN BEAM [J].

DICKSON, LD .

APPLIED OPTICS, 1970, 9 (08) :1854-&

[9] LASER MICROPHOTOCHEMISTRY FOR USE IN SOLID-STATE ELECTRONICS [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (11) :1233-1243

[10] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

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