OXIDATION OF SILICON BY ION-IMPLANTATION AND LASER IRRADIATION

[1] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) : 1931 - 1942

[2] Chalmers B., 1964, PRINCIPLES SOLIDIFIC

[3] CHAMPAGNE R, 1977, SOLID STATE TECHNOL, V20, P62

[4] COMPARATIVE STUDY OF PLASMA ANODIZATION OF SILICON IN A COLUMN OF A DC GLOW DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 199 - &

[5] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 320 - 322

[6] THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS [J]. THIN SOLID FILMS, 1976, 37 (02) : 241 - 248

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[8] SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) : 4323 - +

[9] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2703 - +

[10] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 131 - 136

[1] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) : 1931 - 1942

[2] Chalmers B., 1964, PRINCIPLES SOLIDIFIC

[3] CHAMPAGNE R, 1977, SOLID STATE TECHNOL, V20, P62

[4] COMPARATIVE STUDY OF PLASMA ANODIZATION OF SILICON IN A COLUMN OF A DC GLOW DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 199 - &

[5] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 320 - 322

[6] THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS [J]. THIN SOLID FILMS, 1976, 37 (02) : 241 - 248

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[8] SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) : 4323 - +

[9] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2703 - +

[10] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 131 - 136