TRANSIENT ENHANCED DIFFUSION DURING POSTIMPLANT ANNEALING OF SILICON

被引：1

作者：

BENNETT, DJ

PRICE, TE

机构：

[1] Dept. of Electr. and Electron. Eng., Paisley Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 08期

关键词：

D O I：

10.1088/0268-1242/9/8/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for calculating diffusion enhancement due to dopant-defect pairing in ion-implanted silicon is described. The number of dopant-defect pairs is calculated from a general defect clustering model. The assumption that a net dopant flux arises from dopant-defect pair gradients leads to the calculation of an initial enhanced diffusion coefficient. This diffusion enhancement is shown to be consistent with measured transient diffusion.

引用

页码：1535 / 1542

页数：8

共 11 条

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