TRANSIENT RADIATION EFFECTS IN SOI STATIC RAM CELLS

被引：20

作者：

MIKAWA, RE ^{[1
]}

ACKERMANN, MR ^{[1
]}

机构：

[1] HQ SAC XPFS, OFFUTT AFB, NE 68113 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1698 / 1703

页数：6

共 9 条

[1] FACTORS CONTRIBUTING TO CMOS STATIC RAM UPSET [J].

ACKERMANN, MR ;

MIKAWA, RE ;

MASSENGILL, LW ;

DIEHL, SE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1524-1529

[2] TOTAL DOSE RADIATION-BIAS EFFECTS IN LASER-RECRYSTALLIZED SOI MOSFETS [J].

DAVIS, GE ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1685-1689

[3] TRANSIENT RADIATION EFFECTS IN SOI MEMORIES [J].

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[5] ANALYSIS OF TRANSIENT RADIATION UPSET IN A 2K SRAM [J].

MASSENGILL, LW ;

DIEHLNAGLE, SE ;

WROBEL, TF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4026-4030

[6] TRANSIENT RADIATION UPSET SIMULATIONS OF CMOS MEMORY-CIRCUITS [J].

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DIEHLNAGLE, SE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1337-1343

[7] EFFECTS OF IONIZING-RADIATION ON SOI/CMOS DEVICES FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2 [J].

TSAUR, BY ;

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FAN, JCC .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :238-240

[8] EFFECTS OF IONIZING-RADIATION ON N-CHANNEL MOSFETS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2 [J].

TSAUR, BY ;

FAN, JCC ;

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SILVERSMITH, DJ .

ELECTRON DEVICE LETTERS, 1982, 3 (07) :195-197

[9] TRANSIENT RESPONSE OF TRANSISTORS + DIODES TO IONIZING RADIATION [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (05) :24-&

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