CRYSTALLITE-SIZE-DEPENDENT CHARACTERISTICS OF POROUS SILICON

被引：10

作者：

BHORASKAR, SV

BHAVE, T

RAILKAR, TA

机构：

[1] Department of Physics, University of Poona, Pune

来源：

BULLETIN OF MATERIALS SCIENCE | 1994年 / 17卷 / 05期

关键词：

POROUS SILICON; CRYSTALLITE SIZE DEPENDENCE;

D O I：

10.1007/BF02757898

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous silicon prepared with anodic currents of 5 to 30 mA/cm(2) are characterized for structural and electronic properties of surface using photoluminescence, grazing angle X-ray diffraction, photoconductivity, thermally stimulated exo electron emission and work function measurements. The observed results indicate that with increasing porosity the crystallite size decreases and the amount of silicon hydride and oxide-type species increases, exhibiting a tendency similar to that of hydrogenated amorphous silicon and hydrogenated microcrystalline silicon. Free-standing powder of porous silicon, characterized by bright photoluminescence at 730 nm, showed crystallites of nanometre dimensions under the transmission electron microscope.

引用

收藏

页码：523 / 531

页数：9

相关论文

共 20 条

[1] STUDIES OF COHERENT AND DIFFUSE-X-RAY SCATTERING BY POROUS SILICON [J].

BELLET, D ;

DOLINO, G ;

LIGEON, M ;

BLANC, P ;

KRISCH, M .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :145-149

[2] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].

BRANDT, MS ;

FUCHS, HD ;

STUTZMANN, M ;

WEBER, J ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4] VISIBLE LUMINESCENCE FROM SILICON-WAFERS SUBJECTED TO STAIN ETCHES [J].

FATHAUER, RW ;

GEORGE, T ;

KSENDZOV, A ;

VASQUEZ, RP .

APPLIED PHYSICS LETTERS, 1992, 60 (08) :995-997

[5] MICROSTRUCTURE AND OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS - SIZE DEPENDENCE OF ABSORPTION-SPECTRA IN SI NANOMETER-SIZED CRYSTALLITES [J].

KANEMITSU, Y ;

UTO, H ;

MASUMOTO, Y ;

MATSUMOTO, T ;

FUTAGI, T ;

MIMURA, H .

PHYSICAL REVIEW B, 1993, 48 (04) :2827-2830

[6] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].

LEHMANN, V ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858

[7]

MATSUDA A, 1983, JPN J APPL PHYS, V22, P634

[8] LUMINESCENT POROUS SILICON SYNTHESIZED BY VISIBLE-LIGHT IRRADIATION [J].

NOGUCHI, N ;

SUEMUNE, I .

APPLIED PHYSICS LETTERS, 1993, 62 (12) :1429-1431

[9]

OCHIAI Y, 1992, JPN J APPL PHYS, V31, P560

[10] DIRECT EVIDENCE FOR THE AMORPHOUS-SILICON PHASE IN VISIBLE PHOTOLUMINESCENT POROUS SILICON [J].

PEREZ, JM ;

VILLALOBOS, J ;

MCNEILL, P ;

PRASAD, J ;

CHEEK, R ;

KELBER, J ;

ESTRERA, JP ;

STEVENS, PD ;

GLOSSER, R .

APPLIED PHYSICS LETTERS, 1992, 61 (05) :563-565