EPITAXIAL-GROWTH RATE OF GAAS - CHLORIDE TRANSPORT PROCESS

[1] ARIZUMI T, 1978, CURRENT TOPICS MATER, V1, P343

[2] THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 932 - &

[3] KINETICS OF EPITAXIAL SILICON DEPOSITION BY HYDROGEN REDUCTION OF CHLOROSILANES [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 21 (03) : 205 - &

[4] Hartree DR, 1937, P CAMB PHILOS SOC, V33, P223

[5] HIRSCHFELDER JO, 1954, MOL THEORY GASES LIQ, P359

[6] INFLUENCE OF GROWTH PARAMETERS IN GAAS VAPOR-PHASE EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) : 135 - 139

[7] VARIATION OF GAAS EPITAXIAL-GROWTH RATE WITH DISTANCE ALONG SUBSTRATE WITHIN A CONSTANT TEMPERATURE ZONE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) : 1440 - 1443

[8] MODELING OF LOW-PRESSURE CVD PROCESSES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2288 - 2291

[9] Reid R, 1975, PROPERTIES GASES LIQ

[10] Schlichting H., 1961, BOUNDARY LAYER THEOR, V9th ed.

[1] ARIZUMI T, 1978, CURRENT TOPICS MATER, V1, P343

[2] THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 932 - &

[3] KINETICS OF EPITAXIAL SILICON DEPOSITION BY HYDROGEN REDUCTION OF CHLOROSILANES [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 21 (03) : 205 - &

[4] Hartree DR, 1937, P CAMB PHILOS SOC, V33, P223

[5] HIRSCHFELDER JO, 1954, MOL THEORY GASES LIQ, P359

[6] INFLUENCE OF GROWTH PARAMETERS IN GAAS VAPOR-PHASE EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) : 135 - 139

[7] VARIATION OF GAAS EPITAXIAL-GROWTH RATE WITH DISTANCE ALONG SUBSTRATE WITHIN A CONSTANT TEMPERATURE ZONE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) : 1440 - 1443

[8] MODELING OF LOW-PRESSURE CVD PROCESSES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2288 - 2291

[9] Reid R, 1975, PROPERTIES GASES LIQ

[10] Schlichting H., 1961, BOUNDARY LAYER THEOR, V9th ed.