COMPARISON BETWEEN MICROSCOPICAL ASPECTS OF A-SI FILMS CRYSTALLIZED BY PULSED UV EXCIMER LASER AND CALCULATED TEMPERATURE PROFILES

被引：13

作者：

MAILLOU, JG ^{[1
]}

MATHE, EL ^{[1
]}

DESOYER, JC ^{[1
]}

DEUNAMUNO, S ^{[1
]}

FOGARASSY, E ^{[1
]}

机构：

[1] CTR RECH NUCL,PHASE LAB,CNRS,UPR 292,IN2P3,F-67037 STRASBOURG,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷 / 1-4期

关键词：

Laser Pulses - Lasers; Excimer - Semiconducting Films--Chemical Vapor Deposition;

D O I：

10.1016/0169-4332(89)90204-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper presents some aspects of the crystallization by ArF excimer laser pulses (λ = 193 nm, τ = 20 ns) of various energy densities (in the range 90-400 mJ cm-2) of a-Si: H films deposited by chemical vapour deposition on amorphous SiO2 substrates. The classical division of the crystallized material into a large grain layer and a fine grain layer is found with these experimental conditions but a layer with bubbles also appears between the two crystallized zones. A comparison with the calculation of temperature leads to the hypothesis that crystallization cannot occur if the temperature reached at a given depth is below a temperature Tmin. This temperature may be related to the nucleation rate in a-Si.

引用

页码：150 / 157

页数：8

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