EXCIMER LASER-INDUCED OXIDATION OF ION-IMPLANTED SILICON

被引：9

作者：

FOGARASSY, E

WHITE, CW

SLAOUI, A

FUCHS, C

SIFFERT, P

PENNYCOOK, SJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 18期

关键词：

D O I：

10.1063/1.99805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1720 / 1722

页数：3

共 11 条

[1]

BOYD IW, 1987, SPRINGER SERIES MATE, V3, P154

[2]

FOGARASSY E, 1985, BEAM SOLID INTERACTI, V51, P173

[3] MELTING THRESHOLD OF CRYSTALLINE AND AMORPHIZED SI IRRADIATED WITH A PULSED ARF (193 NM) EXCIMER LASER [J].

FOULON, F ;

FOGARASSY, E ;

SLAOUI, A ;

FUCHS, C ;

UNAMUNO, S ;

SIFFERT, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04) :361-364

[4] INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION [J].

HOH, K ;

KOYAMA, H ;

UDA, K ;

MIURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L375-L378

[5] RAPID OXIDATION VIA ADSORPTION OF OXYGEN IN LASER-INDUCED AMORPHOUS-SILICON [J].

LIU, YS ;

CHIANG, SW ;

BACON, F .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1005-1007

[6] PULSED EXCIMER (KRF) LASER MELTING OF AMORPHOUS AND CRYSTALLINE SILICON LAYERS [J].

NARAYAN, J ;

WHITE, CW ;

AZIZ, MJ ;

STRITZKER, B ;

WALTHUIS, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :564-567

[7] ULTRAFAST LASER-INDUCED OXIDATION OF SILICON - A NEW APPROACH TOWARDS HIGH-QUALITY, LOW-TEMPERATURE, PATTERNED SIO2 FORMATION [J].

ORLOWSKI, TE ;

RICHTER, H .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :241-243

[8] EFFECTS OF AS IMPURITIES ON THE SOLIDIFICATION VELOCITY OF SI DURING PULSED LASER ANNEALING [J].

PEERCY, PS ;

THOMPSON, MO ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :244-246

[9]

SLAOUI A, 1988, APPL PHYS LETT, V53

[10] THERMAL-OXIDATION OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON IN WET OXYGEN [J].

SUNAMI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :892-897

← 1 2 →