ULTRAFAST LASER-INDUCED OXIDATION OF SILICON - A NEW APPROACH TOWARDS HIGH-QUALITY, LOW-TEMPERATURE, PATTERNED SIO2 FORMATION

被引：25

作者：

ORLOWSKI, TE

RICHTER, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.95197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：241 / 243

页数：3

共 20 条

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