DEFECTS OF GE(111)-C(2X8) - STRUCTURAL AND ELECTRONIC CHARACTERIZATION

被引：14

作者：

MOLINASMATA, P

ZEGENHAGEN, J

机构：

[1] Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80

来源：

SURFACE SCIENCE | 1993年 / 281卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(93)90850-J

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We use a scanning tunneling microscope to investigate defects in the Ge(111)-c(2 x 8) reconstruction. Topographic images of the same areas obtained in the constant current mode for two different bias values provide structural and electronic information, e.g. about local charge transfer in the surface. We study defects localized around rest-atom sites using this method of dual-polarity imaging. Possible mechanisms explaining the observed blocking of charge transfer from adatoms to rest atoms are discussed. Anomalies in charge transfer are seen along line defects. Finally, we find new, localized, minority reconstructions like Ge(111)-(8 x 8).

引用

页码：10 / 20

页数：11

共 22 条

[1] DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J].