ION-IMPLANTATION OF ARSENIC IN CHEMICAL VAPOR-DEPOSITION TUNGSTEN SILICIDE

被引：4

作者：

HARA, T

TAKAHASHI, H

CHEN, SC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.582958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1664 / 1667

页数：4

共 10 条

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[8] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J].

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