NOISE CHARACTERIZATION OF TRANSISTORS IN A 1.2-MU-M CMOS SOI TECHNOLOGY UP TO A TOTAL-DOSE OF 12-MRAD-(SI)

被引：10

作者：

FACCIO, F ^{[1
]}

BIANCHI, M ^{[1
]}

FORNASARI, M ^{[1
]}

HEIJNE, EHM ^{[1
]}

JARRON, P ^{[1
]}

ROSSI, G ^{[1
]}

BOREL, G ^{[1
]}

REDOLFI, J ^{[1
]}

机构：

[1] THOMSON TCS,ST EGREVE,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The analog performance of the Thomson HSOI3-HD technology has been measured up to a total dose of 12 Mrad(Si) of ionizing radiation (Co-60). The threshold voltage shift is -170 mV for p-channel and -20 mV for n-channel transistors. Transconductance degradation is respectively 4% and 17%. Noise has been measured in the 500 Hz-25 MHz bandwidth. In addition to the I/f and white noise, a generation-recombination contribution appears in the noise spectrum. This contribution is sensitive to the bias applied to the backgate and body electrodes. The white noise increase after irradiation is 16% for p-channel and 35% for n-channel transistors. p-channel transistors have very low I/f noise and are less sensitive to irradiation effects.

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页码：2310 / 2316

页数：7

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