MICROWAVE HOT-ELECTRON EFFECTS IN SEMICONDUCTOR QUANTIZED INVERSION LAYERS

被引：9

作者：

FERRY, DK

DAS, P

机构：

[1] USN,OFF RES,ARLINGTON,VA 22217

[2] RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 04期

关键词：

D O I：

10.1016/0038-1101(77)90121-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：355 / 359

页数：5

共 38 条

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[3] COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH
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[5] THEORETICAL EFFICIENCY OF LSA MODE FOR GALLIUM ARSENIDE AT FREQUENCIES ABOVE 10GHZ
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[6] EFFECT OF CHARGE INHOMOGENEITIES ON SILICON SURFACE MOBILITY
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[7] INFRARED MAGNETO-TRANSMITTANCE OF A 2-DIMENSIONAL ELECTRON-GAS
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QUINN, JJ
[J]. SURFACE SCIENCE, 1976, 58 (01) : 182 - 184
[8] HOT ELECTRON RELAXATION TIMES IN 2-VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK-MICROWAVE OSCILLATORS
DAS, P
BHARAT, R
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (12) : 386 - &
[9] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS
DAS, P
FERRY, DK
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (10) : 851 - 855
[10] MICROWAVE CONDUCTIVITY OF POLAR SEMICONDUCTORS IN PRESENCE OF HIGH ELECTRIC FIELD
DAS, P
RIFKIN, RH
POOLE, JJ
[J]. ELECTRONICS LETTERS, 1967, 3 (11) : 515 - &

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