学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
INTERFACE CHARGE POLARITY OF A POLAR ON NONPOLAR SEMICONDUCTOR GAAS-SI WITH GA AND AS PRELAYERS
被引:14
作者
:
WON, T
论文数:
0
引用数:
0
h-index:
0
WON, T
MUNNS, G
论文数:
0
引用数:
0
h-index:
0
MUNNS, G
HOUDRE, R
论文数:
0
引用数:
0
h-index:
0
HOUDRE, R
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1986年
/ 49卷
/ 19期
关键词
:
D O I
:
10.1063/1.97379
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1257 / 1259
页数:3
相关论文
共 12 条
[1]
Choi C., UNPUB
[2]
LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
FISCHER, R
KOPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
KOPP, W
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MORKOC, H
PION, M
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
PION, M
SPECHT, A
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
SPECHT, A
BURKHART, G
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
BURKHART, G
APPELMAN, H
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
APPELMAN, H
MCGOUGAN, D
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCGOUGAN, D
RICE, R
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
RICE, R
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(20)
: 1360
-
1361
[3]
MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
FISCHER, R
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
MORKOC, H
NEUMANN, DA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
NEUMANN, DA
ZABEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ZABEL, H
CHOI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
CHOI, C
OTSUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
OTSUKA, N
LONGERBONE, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
LONGERBONE, M
ERICKSON, LP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ERICKSON, LP
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
60
(05)
: 1640
-
1647
[4]
GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
FISCHER, R
CHAND, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
CHAND, N
KOPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
KOPP, W
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MORKOC, H
ERICKSON, LP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
ERICKSON, LP
YOUNGMAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
YOUNGMAN, R
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(04)
: 397
-
399
[5]
ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES
GOURLEY, PL
论文数:
0
引用数:
0
h-index:
0
GOURLEY, PL
BIEFELD, RM
论文数:
0
引用数:
0
h-index:
0
BIEFELD, RM
DAWSON, LR
论文数:
0
引用数:
0
h-index:
0
DAWSON, LR
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(05)
: 482
-
484
[6]
EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIES
KATNANI, AD
论文数:
0
引用数:
0
h-index:
0
KATNANI, AD
MARGARITONDO, G
论文数:
0
引用数:
0
h-index:
0
MARGARITONDO, G
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(05)
: 2522
-
2525
[7]
DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS
MATTHEWS, JW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
MATTHEWS, JW
BLAKESLEE, AE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
BLAKESLEE, AE
[J].
JOURNAL OF CRYSTAL GROWTH,
1976,
32
(02)
: 265
-
273
[8]
MORKOC H, SCIENCE
[9]
STRUCTURAL-PROPERTIES OF GAAS ON SI AND GE SUBSTRATES
NEUMANN, DA
论文数:
0
引用数:
0
h-index:
0
NEUMANN, DA
ZHU, XM
论文数:
0
引用数:
0
h-index:
0
ZHU, XM
ZABEL, H
论文数:
0
引用数:
0
h-index:
0
ZABEL, H
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
HENDERSON, T
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
FISCHER, R
MASSELINK, WT
论文数:
0
引用数:
0
h-index:
0
MASSELINK, WT
KLEM, J
论文数:
0
引用数:
0
h-index:
0
KLEM, J
PENG, CK
论文数:
0
引用数:
0
h-index:
0
PENG, CK
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986,
4
(02):
: 642
-
644
[10]
HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE
OTSUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
OTSUKA, N
CHOI, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
CHOI, C
论文数:
引用数:
h-index:
机构:
NAKAMURA, Y
NAGAKURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
NAGAKURA, S
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
FISCHER, R
PENG, CK
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
PENG, CK
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
MORKOC, H
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(05)
: 277
-
279
←
1
2
→
共 12 条
[1]
Choi C., UNPUB
[2]
LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
FISCHER, R
KOPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
KOPP, W
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MORKOC, H
PION, M
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
PION, M
SPECHT, A
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
SPECHT, A
BURKHART, G
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
BURKHART, G
APPELMAN, H
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
APPELMAN, H
MCGOUGAN, D
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCGOUGAN, D
RICE, R
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166
RICE, R
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(20)
: 1360
-
1361
[3]
MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
FISCHER, R
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
MORKOC, H
NEUMANN, DA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
NEUMANN, DA
ZABEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ZABEL, H
CHOI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
CHOI, C
OTSUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
OTSUKA, N
LONGERBONE, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
LONGERBONE, M
ERICKSON, LP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ERICKSON, LP
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
60
(05)
: 1640
-
1647
[4]
GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
FISCHER, R
CHAND, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
CHAND, N
KOPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
KOPP, W
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MORKOC, H
ERICKSON, LP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
ERICKSON, LP
YOUNGMAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
YOUNGMAN, R
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(04)
: 397
-
399
[5]
ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES
GOURLEY, PL
论文数:
0
引用数:
0
h-index:
0
GOURLEY, PL
BIEFELD, RM
论文数:
0
引用数:
0
h-index:
0
BIEFELD, RM
DAWSON, LR
论文数:
0
引用数:
0
h-index:
0
DAWSON, LR
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(05)
: 482
-
484
[6]
EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIES
KATNANI, AD
论文数:
0
引用数:
0
h-index:
0
KATNANI, AD
MARGARITONDO, G
论文数:
0
引用数:
0
h-index:
0
MARGARITONDO, G
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(05)
: 2522
-
2525
[7]
DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS
MATTHEWS, JW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
MATTHEWS, JW
BLAKESLEE, AE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
BLAKESLEE, AE
[J].
JOURNAL OF CRYSTAL GROWTH,
1976,
32
(02)
: 265
-
273
[8]
MORKOC H, SCIENCE
[9]
STRUCTURAL-PROPERTIES OF GAAS ON SI AND GE SUBSTRATES
NEUMANN, DA
论文数:
0
引用数:
0
h-index:
0
NEUMANN, DA
ZHU, XM
论文数:
0
引用数:
0
h-index:
0
ZHU, XM
ZABEL, H
论文数:
0
引用数:
0
h-index:
0
ZABEL, H
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
HENDERSON, T
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
FISCHER, R
MASSELINK, WT
论文数:
0
引用数:
0
h-index:
0
MASSELINK, WT
KLEM, J
论文数:
0
引用数:
0
h-index:
0
KLEM, J
PENG, CK
论文数:
0
引用数:
0
h-index:
0
PENG, CK
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986,
4
(02):
: 642
-
644
[10]
HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE
OTSUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
OTSUKA, N
CHOI, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
CHOI, C
论文数:
引用数:
h-index:
机构:
NAKAMURA, Y
NAGAKURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
NAGAKURA, S
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
FISCHER, R
PENG, CK
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
PENG, CK
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
MORKOC, H
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(05)
: 277
-
279
←
1
2
→