GROWTH-MECHANISM OF SILICON PLASMA ANODIC NITRIDATION

被引：4

作者：

HIRAYAMA, M

MATSUKAWA, T

ARIMA, H

OHNO, Y

NAKATA, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 10期

关键词：

D O I：

10.1149/1.2113607

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2494 / 2497

页数：4

共 9 条

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[8]

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