CONSIDERATION ON THE VOID GENERATION MECHANISM IN ELECTRON-BEAM RECRYSTALLIZED SILICON-ON-INSULATOR FILMS

被引：4

作者：

HORITA, S ^{[1
]}

ISHIWARA, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.342875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2057 / 2063

页数：7

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