ON THE CHARGE CONTROL OF THE TWO-DIMENSIONAL ELECTRON-GAS FOR ANALYTIC MODELING OF HEMTS

被引:19
作者
SHEY, AJ
KU, WH
机构
关键词
D O I
10.1109/55.20416
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:624 / 626
页数:3
相关论文
共 8 条
[1]   METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960
[2]   MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, M .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341
[3]   CHARGE CONTROL MECHANISM IN MODFETS - A THEORETICAL-ANALYSIS [J].
KHONDKER, AN ;
ANWAR, AFM ;
ISLAM, MA ;
LIMONCELLI, L ;
WILSON, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1825-1826
[4]   AN ANALYTICAL EXPRESSION FOR FERMI LEVEL VERSUS SHEET CARRIER CONCENTRATION FOR HEMT MODELING [J].
KOLA, S ;
GOLIO, JM ;
MARACAS, GN .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) :136-138
[5]   GATE CAPACITANCE VOLTAGE CHARACTERISTIC OF MODFETS - ITS EFFECT ON TRANSCONDUCTANCE [J].
MOLONEY, MJ ;
PONSE, F ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1675-1684
[6]   SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].
STERN, F .
PHYSICAL REVIEW B, 1972, 5 (12) :4891-&
[7]   ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].
STERN, F ;
DASSARMA, S .
PHYSICAL REVIEW B, 1984, 30 (02) :840-848